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Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Davis, J. M.
Attorney: Menzemer; C. L.

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Title: Fine tuning power diodes with irradiation

Abstract: Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/.tau. = 1/.tau..sub.o + K.phi., where .tau. is the desired minority carrier lifetime, .tau..sub.o is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and .phi. is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 .times. 10.sup.12 and 5 .times. 10.sup.13 e/cm.sup.2, with electron radiation of intensity between 1 and 3 Mev.

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Inventors: Tarneja, Krishan S. (Pittsburgh, PA, US)
Bartko, John (Pittsburgh, PA, US)
Johnson, Joseph E. (Pittsburgh, PA, US)

Application Number: 339699
Filing Date: 1973-03-09
Publication_date: 1976-01-20
Assignee: Westinghouse Electric Corporation (Pittsburgh, PA)
Primary Class(es): 438/10 257/617, 257/E21.331, 438/17, 438/798
Other Classes:
US Patent Ref:

2911533	Nov, 1959	Damask	148/1.
3272661	Sep, 1966	Tomono et al.	148/1.
3533857	Oct, 1970	Mayer et al.	148/1.
3736192	May, 1973	Tokuyama et al.	148/1.

Other Refs: Other References: Clark et al., "Isochronal Annealing of P and N-Type Silicon Irradiated at 80.degree.K," Phil. Mag., Nov. 1969, 20(167), pp. 951, 958.