Title: Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates

Abstract: Solid diffusion sources for phosphorus doping comprise from 5 to 95 percent SiP.sub.2 O.sub.7 with an inert phase of ZrP.sub.2 O.sub.7. While such materials may be hot-pressed, it is preferred to cold-press and sinter to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred composition comprises from 25 to 75 weight percent SiP.sub.2 O.sub.7 the balance ZrP.sub.2 O.sub.7. Fabrication parameters range from about 4000 psi to about 20,000 psi pressure during cold-pressing, and from about 1080.degree.C to about 1190.degree.C firing temperature.

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Inventors: Myles, Thomas A. (Tonawanda Township, NY, US)
Zimmer, Curtis E. (Youngstown, NY, US)

Application Number: 500765
Filing Date: 1974-08-26
Publication_date: 1976-01-06
Assignee: The Carborundum Company (Niagara Falls, NY)
Primary Class(es): 252/520.22 252/521.3, 257/E21.14, 257/E21.141, 438/567, 501/103
Other Classes:
US Patent Ref:

2794846	Jun, 1957	Fuller	136/89.
3354005	Nov, 1967	Lepiane	148/186.
3473980	Oct, 1969	Beadle	148/189.
3514348	May, 1970	Ku	148/188.
3540951	Nov, 1970	Pammer	148/189.
3630793	Dec, 1971	Christensen	148/188.
3849344	Nov, 1974	McMurtry	252/500.
3852086	Dec, 1974	Murata	106/286.

Other Refs:
Primary Examiner: Padgett, Benjamin R.
Assistant Examiner: Walsh, Donald P.
Attorney: Dougherty; David E., Green; Raymond W., Mylius; Herbert W.