Title: Process for manufacturing integrated circuits and metallic mesh screens

Abstract: A process step for use in the manufacture of thin film integrated circuits, hybrid circuits and fine metallic mesh screens, to enable the removal of all organics and photoresist material from underlying metallic films without concomitant degradation of the metallic surface. After etching of preselected portions of an underlying critical metallic surface, the material is exposed to a low pressure (few torr) rf generated "cold" plasma, where the plasma is a homogeneous gaseous mixture of oxygen and nitrogen.

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Inventors: Jacob, Adir (Framingham, MA, US)

Application Number: 489598
Filing Date: 1974-07-18
Publication_date: 1976-01-06
Assignee: LFE Corporation (Waltham, MA)
Primary Class(es): 430/329 204/164, 204/192.15, 216/67, 219/121.36, 252/79.1, 257/750, 430/5, 430/320, 438/725
Other Classes:
US Patent Ref:

3615956	Oct, 1971	Irving	156/17.
3664899	May, 1972	Wright	156/8.
3795557	Mar, 1974	Jacob	156/8.
3806365	Apr, 1974	Jacob	96/36.
3816196	Jun, 1974	LaCombe	156/8.
3846166	Nov, 1974	Saiki et al.	117/212.

Other Refs:
Primary Examiner: Powell, William A.
Assistant Examiner:
Attorney: Kenway & Jenney