Title: Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth

Abstract: A method of making a semiconductor device is described in which opposite-type impurities are introduced into the same surface of a substrate in such manner that the region of impurities of the opposite-type to that of the substrate overlaps completely the other substrate surface region. Then an epitaxial layer is grown on the surface of the substrate. There is thus formed two buried layers of which the one with the same type conductivity of the substrate is completely separated and isolated from the latter by the buried layer of opposite-type conductivity. Methods are also described for the manufacture of complementary bipolar transistors, in which the pnp type is made by the above described method.

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Inventors: Schmitz, Albert (Eindhoven, NL)
Mulder, Cornelis (Eindhoven, NL)
Slob, Arie (Eindhoven, NL)

Application Number: 527236
Filing Date: 1974-11-26
Publication_date: 1976-01-06
Assignee: U.S. Philips Corporation (New York, NY)
Primary Class(es): 438/419 257/555, 257/E21.537, 257/E21.544, 257/E21.602, 257/E21.612, 257/E27.057, 438/322, 438/357
Other Classes:
US Patent Ref:

3089794	May, 1963	Marinace	148/175.
3260624	Jun, 1966	Wiesner	148/175.
3260902	Jul, 1966	Porter	148/175.
3327182	Jun, 1967	Kisinko	357/48.
3335341	Aug, 1967	Lin	357/48.
3449643	Jun, 1969	Imaizumi	148/175.
3474308	Oct, 1969	Kronlage	357/48.
3481801	Dec, 1969	Hugle	148/175.

Other Refs:
Primary Examiner: Lovell, C.
Assistant Examiner: Saba, W. G.
Attorney: Trifari; Frank R., Oisher; Jack