Title: High temperature transducers and housing including fabrication methods

Abstract: A dielectrically isolated pressure transducer comprises a silicon diaphragm having on a surface thereof at least one piezoresistive sensor mounted in close proximity with a dielectric insulator, the diaphragm is secured about a non-active peripheral area to an annular ring housing by a glass bond fabricated from a glass material having a low melting temperature when compared to ordinary glass.

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Inventors: Kurtz, Anthony D. (Englewood, NJ, US)
Mallon, Jr., Joseph R. (Woodridge, NJ, US)

Application Number: 358143
Filing Date: 1973-05-07
Publication_date: 1976-01-06
Assignee: Kulite Semiconductor Products, Inc. (Ridgefield, NJ)
Primary Class(es): 65/33.6 65/43, 257/794
Other Classes:
US Patent Ref:

2889952	Jun, 1959	Claypoole	65/33.
3404319	Oct, 1968	Tsuji et al.	317/234.
3486871	Dec, 1969	Martin	65/33.
3503763	Mar, 1970	Mills	65/33.
3533832	Oct, 1970	Volder	317/234.
3662312	May, 1972	Thorp et al.	338/4.

Other Refs:
Primary Examiner: Shore, Ronald J.
Assistant Examiner:
Attorney: Plevy; Arthur L.