Title: Process for attaching a lead member to a semiconductor device

Abstract: A thermally and electrically conductive metal lead member is joined to the refractory metal contact member of a semiconductor device using a brazing alloy comprising on a weight basis about 80-89 percent copper, about 5-15 percent silver, and about 4-6 percent phosphorus. The contact member/semiconductor joint may be formed in an inert atmosphere at the same time and at the same temperature as the contact member/lead member joint.

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Inventors: Goldberg, Monroe B. (Huntington Station, NY, US)
Voorhis, William B. (Levittown, NY, US)

Application Number: 463678
Filing Date: 1974-04-24
Publication_date: 1976-01-06
Assignee: General Instrument Corporation (Clifton, NJ)
Primary Class(es): 29/854 228/123.1, 228/219, 257/762, 257/E21.506, 257/E21.51, 257/E23.01, 257/E23.028, 257/E23.187, 438/121, 438/124
Other Classes:
US Patent Ref:

3378914	Apr, 1968	Miller	228/219.
3844029	Oct, 1974	Dibugnara	29/588.